Charge transfer in the Ni/SiOx/nSi(lll) system

Abstract

Binding energies of the core level (Ni 2P3/2 and LMM Auger peak have been measured For the system Ni/SiOx/p or n-Si(lll) with different coverages of nickel- The Auger parameter was used to evaluate the re&xation shirt from which the extent of chemical shift was deduced Tbe binding energy shirt has been shown to be a functlon of the thickness of oxide layer. The differences in the behaviour of the substrates formed Corn n- and p-type silicon show that charge bansfer, though d can account for the observation on the substrate from n-type Si, is dependent on a number of factors like position and density of donor states and tunneling width.